An Accurate Analytical Propagation Delay Model of Nano CMOS Circuits
نویسندگان
چکیده
An accurate analytical transient response and propagation delay model of nano CMOS inverter is presented. A modified version of α -power law MOSFET current model is proposed. The proposed model overcomes the over-estimation of linear region current in α -power law current model, and takes into account the channel length modulation effects in nano devices. A new methodology to estimate propagation delay by solving non-homogeneous linear differential equation of CMOS inverter is developed based on this current model. An analytical transient output response and propagation delay expression is derived. The final results are in excellent agreement with HSPICE simulations within 3% error for a wide range of transistor sizes, capacitor loads and input transition time. This delay estimation model demonstrates robustness for a wide range of processes from 0.25um to 65nm technology.
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